Compact Technology
1N5817 thru 1N5819
REVERSE VOLTAGE -
20
to
40
Volts
FORWARD CURRENT -
1.0
Ampere
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
A
DO-41
B
A
C
D
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
DO-41
Dim.
A
B
C
Min.
25.4
4.20
0.70
Max.
-
5.20
0.90
2.00
2.70
D
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
@T
A
=
90 C
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum forward Voltage at 1.0A DC
Maximum forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Bl ocking Voltage
SYMBOL
1N5817
20
14
20
1N5818
30
21
30
1.0
25
1N5819
40
28
40
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
V
F
I
R
C
J
R
0JA
A
0.450
0.750
0.550
0.875
1.0
10
110
50
-55 to +125
-55 to +150
0.600
0.900
V
V
mA
mA
pF
C/W
@T
A
=25 C
@T
A
=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
T
J
T
STG
C
C
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
CTC0072
Ver.
2.0
1 of 2
1N5817 thru 1N5819
CTC [ COMPACT TECHNOLOGY CORP. ]
