XThin
®
LEDs
CxxxXT420-Sxx00-A
Cree’s XThin LEDs are the next generation of solid-state LEDs that combine highly efficient InGaN materials with Cree’s
proprietary G•SiC
®
substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a
geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond
connection. These vertically structured LED chips are approximately 175 microns in height and require a low forward
voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and the ability to withstand
1000 V ESD. Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and
digital camera flash where brightness, sub-miniaturization, and low power consumption are required.
FEATURES
•
•
•
•
XThin LED Performance
– 450 nm – 24 mW min.
Low Forward Voltage
Single Wire Bond Structure
Class 2 ESD Rating
APPLICATIONS
•
•
•
•
LCD Backlighting
Digital Camera Flash for Mobile Appliance
LED Video Displays
Audio Product Display Lighting
CxxxXT420-Sxx00-A Chip Diagram
Top View
Bottom View
Die Cross Section
-
PR3DB Rev.
Datasheet: C
G•SiC LED Chip
420 x 420 μm
Gold Bond Pad
105 μm Diameter
Backside
Metalization
Cathode (-)
SiC Substrate
t = 175 µm
Anode (+)
Subject to change without notice.
www.cree.com
CREE [ CREE, INC ]
