Characteristic Curves
These are representative measurements for the EZBright Power Chip LED product. Actual curves will vary slightly for the
various radiant flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
500
VoltageShift (nm)
DW Shift (V)
400
If (mA)
300
200
100
0
0
1
2
Vf (V)
3
4
5
6
0.100
5
0.000
4
-0.100
3
Dominant Wavelength Shift vs. Junction Temperature
Voltage Shift vs. Junction Temperature
2
-0.200
1
-0.300
0
-0.400
-1
-0.500
-2
-0.600
25
25
50
50
75
100
125
75
100
125
Junction Temperature (°C)
Junction Temperature (°C)
150
150
Relative Intensity vs. Forward Current
200%
Relative Intensity
Relative Intensity
Relative Light Intensity vs. Junction Temperature
110%
105%
175%
Relative Intensity
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750
If (mA)
150%
125%
100%
100%
95%
90%
85%
80%
75%
70%
75%
50%
25%
0%
65%
25
50
75
100
125
150
Junction Temperature (°C)
Wavelength Shift vs. Forward Current
16
12
DW Shift (nm)
DW Shift (nm)
4
0
-4
-8
Dominant Wavelength Shift vs. Junction Temperature
6
5
DW Shift (nm)
4
3
2
1
0
-1
8
-12
-16
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750
If (mA)
-2
25
50
75
100
125
150
Junction Temperature (°C)
Relative Light Intensity vs. Junction Temperature
110%
105%
Relative Intensity
100%
Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
90%
and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc.
95%
85%
80%
75%
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DW Rev. B