欢迎访问ic37.com |
会员登录 免费注册
发布采购

C450DA3547-0313 参数 Datasheet PDF下载

C450DA3547-0313图片预览
型号: C450DA3547-0313
PDF下载: 下载PDF文件 查看货源
内容描述: 矩形LED射频性能的高可靠性 - 低共熔附 [Rectangular LED RF Performance High Reliability - Eutectic Attach]
分类和应用: 射频
文件页数/大小: 5 页 / 403 K
品牌: CREE [ CREE, INC ]
 浏览型号C450DA3547-0313的Datasheet PDF文件第1页浏览型号C450DA3547-0313的Datasheet PDF文件第3页浏览型号C450DA3547-0313的Datasheet PDF文件第4页浏览型号C450DA3547-0313的Datasheet PDF文件第5页  
Maximum Ratings at TA = 25°CNotes 1,3, & 4  
DCꢀForwardꢀCurrent  
CxxxDA3547-Sxxx00  
150ꢀmA  
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)  
LEDꢀJunctionꢀTemperature  
200ꢀmA  
150°C  
ReverseꢀVoltage  
5ꢀV  
OperatingꢀTemperatureꢀRange  
-40°Cꢀtoꢀ+100°C  
-40°Cꢀtoꢀ+100°C  
1000ꢀV  
StorageꢀTemperatureꢀRange  
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2  
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2  
Classꢀ2  
Note 3  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 50 mA  
Reverse Current  
[I(Vr=5V), μA]  
Full Width Half Max  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
3.1  
Max.  
Max.  
Typ.  
20  
C450DA3547-Sxxx00  
C460DA3547-Sxxx00  
2.8  
2.8  
3.4  
3.4  
2
2
3.1  
21  
Mechanical Specifications  
Description  
CxxxDA3547-Sxxx00  
Dimension  
Tolerance  
±35  
P-NꢀJunctionꢀAreaꢀ(μm)  
296ꢀxꢀ416  
350ꢀxꢀ470  
200ꢀxꢀ320  
155  
ChipꢀBottomꢀAreaꢀ(μm)  
±35  
ChipꢀTopꢀAreaꢀ(μm)  
±35  
ChipꢀThicknessꢀ(μm)  
±15  
AuSnꢀBondꢀPadꢀWidthꢀ–ꢀAnodeꢀ(um)  
AuSnꢀBondꢀPadꢀLengthꢀ–ꢀAnodeꢀ(um)  
AuSnꢀBondꢀPadꢀWidthꢀ–ꢀCathodeꢀ(um)  
AuSnꢀBondꢀPadꢀLengthꢀ–ꢀCathodeꢀ(um)  
BondꢀPadꢀGapꢀ(μm)  
90  
±15  
296  
±35  
236  
±35  
296  
±35  
90  
±15  
AuSnꢀBondꢀPadꢀThicknessꢀ(μm)  
3
±0.5  
Notes:  
1.ꢀ Maximumꢀratingsꢀareꢀpackage-dependent.ꢀTheꢀaboveꢀratingsꢀwereꢀdeterminedꢀusingꢀaꢀchipꢀsub-mountꢀonꢀMCPCBꢀ(withꢀsiliconeꢀencapsulationꢀandꢀ  
intrinsicꢀAuSnꢀmetalꢀdieꢀattach)ꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀJunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀ  
packageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).  
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀenergyꢀtestꢀ(RAET).ꢀ  
TheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.  
3.ꢀ Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembledandoperatedꢀ  
atꢀ50ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀareꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀ  
valuesꢀexpectedꢀbyꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀAllꢀmeasurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀ  
packages(withHysolOS4000epoxyencapsulantandintrinsicAuSnmetaldieattach).Opticalcharacteristicsmeasuredinanintegratingsphereꢀ  
usingꢀIlluminanceꢀE.  
4.ꢀ TheꢀmaximumꢀforwardꢀcurrentꢀisꢀdeterminedꢀbyꢀtheꢀthermalꢀresistanceꢀbetweenꢀtheꢀLEDꢀjunctionꢀandꢀambient.ꢀItꢀisꢀcrucialꢀforꢀtheꢀend-productꢀtoꢀbeꢀ  
designedꢀinꢀaꢀmannerꢀthatꢀminimizesꢀtheꢀthermalꢀresistanceꢀfromꢀtheꢀLEDꢀjunctionꢀtoꢀambientꢀinꢀorderꢀtoꢀoptimizeꢀproductꢀperformance.  
160  
140  
120  
100  
80  
Rth j-a = 10 C/W  
Rth j-a = 20 C/W  
60  
Rth j-a = 30 C/W  
Rth j-a = 40 C/W  
40  
20  
0
50  
75  
100  
125  
150  
175  
Ambient Temperature (C)  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Durham,ꢀNCꢀ27703  
USAꢀTel:ꢀ+1.919.313.5300  
www.cree.com  
Copyrightꢀ©ꢀ2010ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀDAꢀandꢀDA3547ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ  
2
CPR3EL Rev. A