Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Typ.
Symbol
Parameter
Min.
1000
1.8
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.1
1.6
1
3.5
VDS = VGS, ID = 3 mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 3 mA, TJ = 150ºC
VDS = 1000 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
155
μA
nA
10
120
170
7.7
6.7
VGS = 15 V, ID = 15 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
VGS = 15 V, ID = 15 A, TJ = 150ºC
VDS= 20 V, IDS= 15 A
gfs
S
Fig. 7
VDS= 20 V, IDS= 15 A, TJ = 150ºC
Ciss
Coss
Crss
Eoss
Input Capacitance
350
40
3
Fig. 17,
18
VGS = 0 V, VDS = 600 V
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
pF
f = 1 MHz
AC
V
= 25 mV
9
μJ
μJ
Fig. 16
Fig. 26
EON
Turn-On Switching Energy (Body Diode FWD)
284
VDS = 700 V, VGS = -4 V/15 V, ID = 15A,
RG(ext) =ꢀ2.5Ω,ꢀL=ꢀ180ꢀμH,ꢀꢀTJ = 150ºC
EOFF
td(on)
tr
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
20
31
15
VDD = 700 V, VGS = -4 V/15 V
ID = 15 A, RG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀ
Timing relative to VDS
Inductive load
Rise Time
Fig. 27,
28
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
19
8
,
RG(int)
Qgs
Qgd
Qg
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
16
Ω
f = 1 MHz VAC = 25 mV
4.8
VDS = 700 V, VGS = -4 V/15 V
ID = 15 A
10.0
21.5
nC
Fig. 12
Per IEC60747-8-4 pg 21
(T ꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.8
V
V
VGS = -4 V, ISD = 7.5 A
Fig. 8,
9, 10
VSD
Diode Forward Voltage
4.4
VGS = -4 V, ISD = 7.5 A, T = 150 °C
J
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
16.5
50
A
VGS = -4 V
Note 1
Note 1
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
16
ns
VGS = -4 V, ISD = 15 A, VR = 700 V
Note 1
Qrr
Irrm
Reverse Recovery Charge
154
15
nC
A
dif/dt = 2400 A/µs, T = 150 °C
J
Peak Reverse Recovery Current
Thermal Characteristics
Symbol
RθJC
Parameter
Max.
1.5
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
RθJA
Thermal Resistance From Junction to Ambient
40
2
C3M0120100K Rev. -, 12-2016