Typical Performance
35
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
0
30
25
20
15
10
5
tp < 200 µs
-5
TJ = 150 °C
VGS = -4 V
-10
-15
-20
-25
-30
-35
-40
-45
VGS = 0 V
TJ = 25 °C
TJ = -55 °C
VGS = -2 V
Conditions:
TJ = -55°C
tp < 200 µs
0
0
2
4
6
8
10
12
14
Drain-Source Voltage VDS (V)
Gate-SourceVoltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
-5
-5
V
GS = -4 V
VGS = -4 V
-10
-15
-20
-25
-30
-35
-40
-45
-10
VGS = 0 V
VGS = 0 V
-15
-20
-25
-30
-35
-40
-45
VGS = -2 V
VGS = -2 V
Conditions:
TJ = 150°C
tp < 200 µs
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
GS = VDS
IDS = 3 mA
Conditions:
V
I
DS = 15 A
IGS = 18 mA
V
DS = 700 V
12
8
TJ = 25 °C
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
4
8
12
16
20
24
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0120100J Rev. -, 04-2017
CREE [ CREE, INC ]
