Typical Performance
160
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
tp < 200 µs
0
140
VGS = -4 V
TJ = 175 °C
TJ = 25 °C
-20
-40
-60
-80
-100
-120
120
100
80
60
40
20
0
VGS = 0 V
VGS = -2 V
TJ = -40 °C
Conditions:
TJ = -40°C
tp < 200 µs
0
2
4
6
8
10
12
14
Drain-Source Voltage VDS (V)
Gate-Source Voltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -40 ºC
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
VGS = -4 V
VGS = -4 V
-20
-40
-60
-80
-100
-120
-20
-40
-60
-80
-100
-120
VGS = 0 V
VGS = 0 V
VGS = -2 V
VGS = -2 V
Conditions:
TJ = 25°C
tp < 200 µs
Conditions:
TJ = 175°C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 175 ºC
4.0
16
Conditions:
IDS = 40 A
Conditons
VGS = VDS
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IGS = 50 mA
VDS = 800 V
TJ = 25 °C
IDS = 11.5 mA
12
8
4
0
-4
-40
-5
30
65
100
135
170
0
20
40
60
80
100
120
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
5
C3M0032120D Rev. -, 08-2019