Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1200
1.8
Typ.
Max. Unit
Test Conditions
VGS = 0 V, ID = 100 μA
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
2.5
2.0
1
3.6
V
V
VDS = VGS, ID = 23 mA
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 23 mA, TJ = 175ºC
VDS = 1200 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
50
μA
nA
10
250
22.3
11.2
16
VGS = 15 V, ID = 75 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
28.8
53
VGS = 15 V, ID = 75 A, TJ = 175ºC
VDS= 20 V, IDS= 75 A
gfs
S
Fig. 7
47
VDS= 20 V, IDS= 75 A, TJ = 175ºC
Ciss
Input Capacitance
Output Capacitance
6085
230
VGS = 0 V, VDS = 1000 V
Fig. 17,
18
Coss
pF
f = 100 KHz
Crss
Eoss
EON
Reverse Transfer Capacitance
Coss Stored Energy
13
AC
V
= 25 mV
130
4.64
μJ
Fig. 16
Fig. 26
Turn-On Switching Energy (SiC Diode FWD)
VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A,
RG(ext) = 5Ω, L= 65.7 μH, Tj = 175ºC
mJ
EOFF
EON
Turn Off Switching Energy (SiC Diode FWD)
Turn-On Switching Energy (Body Diode FWD)
Turn Off Switching Energy (Body Diode FWD)
2.93
7.79
2.95
VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A,
RG(ext) = 5Ω, L= 65.7 μH, Tj = 175ºC
mJ
ns
Fig. 26
Fig. 27
EOFF
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
174
28
VDD = 800 V, VGS = -4 V/15 V
RG(ext) = 5 Ω, ID = 75 A, L= 65.7 μH
Timing relative to VDS, Inductive load
Turn-Off Delay Time
Fall Time
84
27
,
RG(int)
Qgs
Qgd
Qg
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
2.6
70
Ω
f = 1 MHz VAC = 25 mV
VDS = 800 V, VGS = -4 V/15 V
ID = 75 A
Per IEC60747-8-4 pg 21
60
nC
Fig. 12
207
2
C3M0016120D Rev. -, 08-2019
CREE [ CREE, INC ]
