Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
V
Test Conditions
Note
1.7
3
2
3.5
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
VF
IR
Forward Voltage
20
100
60
300
VR = 1700 V TJ=25°C
VR = 1700 V TJ=175°C
Reverse Current
μA
VR = 1700 V, IF = 10 A
di/dt = 200 A/μs
TJ = 25°C
QC
C
Total Capacitive Charge
96
nC
pF
827
78
41
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Total Capacitance
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
Typ.
Unit
RθJC
Thermal Resistance from Junction to Case
0.65
°C/W
Typical Performance
5
4
3
2
1
20
18
16
14
12
10
8
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
6
4
2
0
0
0
0
1
2
3
4
5
6
7
250
500
750
1000
1250
1500
1750
2000
2250
VR (V)
VF (V)
Figure 2. Reverse Characteristics
Figure 1. Forward Characteristics
2
C3D10170H Rev. -