PNP BDT82 - BDT84 - BDT86 - BDT88
NPN BDT81 - BDT83 - BDT85 - BDT87
符号
T
J
结温
评级
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
价值
150
单位
°C
T
英镑
储存温度
-65到+150
°C
热特性
符号
R
thJA
R
thJMB
评级
热阻,结到环境
热阻,结到安装底座
价值
70
1
单位
K / W
K / W
电气特性
TC = 25° C除非另有说明
符号
-I
CB0
评级
收藏家Cuto FF电流
测试条件(S )
-I
E
=0A , -
V
CB
=60 V
-I
E
=0A , -
V
CB
=80 V
-I
E
=0A , -
V
CB
=100 V
-I
E
=0A , -
V
CB
=120 V
-V
BE
=0 , -V
CE
= 60V
-V
BE
=0 , -V
CE
= 80V
-V
BE
=0 , -V
CE
= 100V
-V
BE
=0 , -V
CE
= 120V
-V
EB
= 7.0 V, -I
C
=0
最小典型单位的Mx
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
1
1
1
1
0.1
mA
-I
CES
收藏家Cuto FF电流
-I
EBO
发射Cuto FF电流
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
mA
mA
-I
C
= 50微米的, -V
CE
=10 V
40
-
-
-
H
FE
直流电流增益( 1 )
-I
C
= 5 A, -V
CE
=4.0 V
40
-
-
-I
C
= 5 A, -I
B
=0.5 A
-
-
1
V
-V
CE ( SAT )
集电极 - 发射极
饱和电压( 1)
-I
C
= 7 A, -I
B
=0.7 A
-
-
1.6
半导体COMSET
2/3