PNP 2N4030 - 2N4031 - 2N4032 - 2N4033
电气特性
TC = 25° C除非另有说明
符号
评级
测试条件(S )
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
民
30
75
40
100
25
70
15
10
40
25
15
40
100
150
-
-
-
-
-
典型值
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
最大
-
-
120
300
-
单位
-I
C
= 100 μA , -V
CE
= 5 V
-I
C
= 100毫安, -V
CE
= 5V
h
FE
(*)
直流电流增益
-I
C
= 500毫安, -V
CE
= 5V
-
-
-
-
-
-
-
-
400
MH
Z
500
110
20
350
50
100
pF
pF
ns
ns
ns
-I
C
= 1 A, -V
CE
= 5 V
-I
C
= 100毫安, -V
CE
= 5V
T
AMB
= -55°c
f
T
过渡
频率
发射极 - 基
电容
集电极 - 基
电容
存储时代
下降时间
导通时间
-I
C
= 50毫安, -V
CE
= 10 V
F = 100 MH
Z
I
C
= 0, -V
EB
= 0.5 V
F = 1 MH
Z
I
E
= 0, -V
CB
= 10V
F = 1 MH
Z
-I
C
= 500毫安, -V
CC
= 30V
-I
B1
= -I
B1
= 50毫安
-I
C
= 500毫安, -V
CC
= 30V
-I
B1
= -I
B1
= 50毫安
-I
C
= 500毫安, -V
CC
= 30V
-I
B1
= -I
B1
= 50毫安
C
EBO
C
CBO
t
S
t
f
t
on
( * )脉冲:脉冲宽度= 300μS ,占空比= 1 %
17/10/2012
半导体COMSET
3/4