SEMICONDUCTORS
PNP TIP42-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICES
Ratings
Test Condition(s)
Min Typ Mx Unit
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
Collector Cutoff Current
IE= 0, VCE = -VCEO
-
-
-0.4
Ma
mA
mA
V
IB= 0, VCE = -30V
IB= 0, VCE = -60V
-
-
-
-
-0.7
-0.7
ICEO
Collector Cutoff Current
Emitter Cutoff Current
TIP42A
TIP42B
TIP42C
TIP42
IEBO
VEB= -5 V, IC= 0
-
-
-1
-40
-60
-80
-
-
-
-
-
-
-
-
TIP42A
TIP42B
Collector-Emitter Breakdown
Voltage (*)
VCEO
IC= -30 mA, IB= 0
TIP42C -100
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
Collector-Emitter saturation
Voltage (*)
IC= -6 A, IB= -600
mA
VCE(SAT)
-
-
-
-
-
-
-
-1.5
V
VBE(on)
Base-Emitter Voltage (*)
DC Current Gain (*)
IC= -6 A, VCE= -4 V
-
-2
-
V
VCE= -4 V, IC= -0.3
A
30
hFE
-
VCE= -4 V, IC= -3 A
15
75
-
VCE= -10 V, IC= -
0.5 A, f= 1kHz
hfe
Small Signal Current Gain
20
-
Current Gain-Bandwidth
Product
VCE= -10 V, IC= -
0.5 A
fT
3
-
MHz
TIP42B
TIP42C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
04/10/2012 COMSET SEMICONDUCTORS
3 | 4
COMSET [ COMSET SEMICONDUCTOR ]
