SEMICONDUCTORS
PNP TIP36-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
Min
Typ
Max
Unit
I
CES
Collector Cutoff Current
I
E
= 0, V
CE
= -V
CEO
-
-
-0.7
Ma
I
B
= 0, V
CE
= -30V
I
CEO
Collector Cutoff Current
I
B
= 0, V
CE
= -60V
-
-
-
-
-1
mA
-1
I
EBO
Emitter Cutoff Current
V
EB
= -5 V, I
C
= 0
-
-40
-60
-80
-100
-
-
-
-
-
-
-
-1
-
-
-
-
-1.8
mA
V
CEO
Collector-Emitter
Breakdown Voltage (*)
I
C
= -30 mA, I
B
= 0
V
I
C
= -15 A, I
B
= -1.5 A
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
= -25 A, I
B
= -5 A
V
-
-
-4
V
I
C
= -15 A, V
CE
= -4 V
V
BE(on)
Base-Emitter Voltage (*)
I
C
= -25 A, V
CE
= -4 V
-
-
-2
V
-
-
-4
V
V
CE
= -4 V, I
C
= -1.5 A
h
FE
DC Current Gain (*)
V
CE
= -4 V, I
C
= -15 A
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
04/10/2012
25
-
-
-
15
-
75
COMSET SEMICONDUCTORS
3|4
COMSET [ COMSET SEMICONDUCTOR ]
