SEMICONDUCTORS
NPN TIP35-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CES
Ratings
Collector Cutoff Current
Test Condition(s)
I
E
= 0, V
CE
= V
CEO
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
Min
-
Typ
-
Max
0.7
Unit
Ma
I
B
= 0, V
CE
= 30V
I
CEO
Collector Cutoff Current
I
B
= 0, V
CE
= 60V
-
-
-
-
1
mA
1
I
EBO
Emitter Cutoff Current
V
EB
= 5 V, I
C
= 0
-
40
60
80
100
-
-
-
-
-
-
-
1
-
-
-
-
1.8
mA
V
CEO
Collector-Emitter
Breakdown Voltage (*)
I
C
= 30 mA, I
B
= 0
V
I
C
= 15 A, I
B
= 1.5 A
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
= 25 A, I
B
= 5 A
V
-
-
4
V
I
C
= 15 A, V
CE
= 4 V
V
BE(on)
Base-Emitter Voltage
(*)
I
C
= 25 A, V
CE
= 4 V
-
-
2
V
-
-
4
V
V
CE
=4 V, I
C
= 1.5 A
h
FE
DC Current Gain (*)
V
CE
= 4 V, I
C
= 15 A
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
04/10/2012
25
-
-
-
15
-
75
COMSET SEMICONDUCTORS
3|4
COMSET [ COMSET SEMICONDUCTOR ]
