SEMICONDUCTORS
TIP150
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
I
CEO
I
CEOX(sus)
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
h
fe
V
F
C
OB
Ratings
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage (4)
Collector-Emitter Cutoff
Current
Collector-Emitter sustaining
Current
Emitter Cutoff Current
Collector-Emitter saturation
Voltage (4-5)
Base-Emitter Saturation
Voltage (4-5)
Forward Current transfer ratio
(4-5)
Small Signal Forward Current
transfer ratio
Diode forward Voltage
Output Capacitance
Test Condition(s)
I
C
= 1 mA, I
E
= 0
I
C
= 10 mA, I
B
= 0
I
B
= 0, V
CE
= 300 V
I
E
= 0, V
CLAMP
= V
CEO
V
EB
= 8 V, I
C
= 0
I
C
= 1 A, I
B
= 10 mA
I
C
= 2 A, I
B
= 100 mA
I
C
= 5 A, I
B
= 250 mA
I
C
= 2 A, I
B
= 100 mA
I
C
= 5 A, I
B
= 250 mA
V
CE
= 5.0 V, I
C
= 2.5 A
V
CE
= 5.0 V, I
C
= 5 A
V
CE
= 5.0 V, I
C
= 7 A
V
CE
= 5.0 V, I
C
= 0.5 A
f= 1 kHz
I
F
= 7 A
I
E
= 0 ; V
CB
= 10 V
f= 1 MHz
Min
300
300
-
7
-
-
-
-
-
-
150
50
15
200
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
250
-
15
1.5
1.5
2
2.2
2.3
-
-
-
-
3.5
150
Unit
V
V
µA
A
mA
V
V
-
-
V
pF
SWITCHING TIMES.
Symbol
t
d
t
r
t
s
t
f
Ratings
Delay Time
Rise time
Storage Time
Fall Time
Test Condition(s)
V
CC
= 250 V; I
C
= 5 A
I
B1
= -I
B2
= 250 mA
t
p
= 20 µs, duty cycle <2%.
Min
-
-
-
-
Typ
0.03
0.18
3.5
1.6
Max
-
-
-
-
Unit
µs
4. These parameters must be measured using pulse techniques, t
p
300
µs,
Duty Cycle
∠
2.0%
5. These parameters must be measured using voltage-sensing contacts, separate from the
current carrying contacts.
15/10/2012
09/11/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
