SEMICONDUCTORS
PNP TIP115-116-117
THERMAL CHARACTERISTICS
Symbol
R
thJ-case
From junction-case
Ratings
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
Value
2.5
Unit
°C/W
R
thJ-amb
From junction-ambient
62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
Ratings
Collector Cutoff Current
Test Condition(s)
I
E
= 0,V
CB
= -V
CBO
max
I
E
= 0,
V
CE
= -1/2 V
CEO
max
V
EB
= -5 V, I
C
= 0
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
Min
-
Typ
-
Max
-1
Unit
mA
I
CEO
Collector Cutoff Current
-
-
-2
mA
I
EBO
Emitter Cutoff Current
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter Voltage
(*)
-
-60
-80
-100
-
-
-
-
-
-
-2
-
-
-
-2.5
mA
V
CEO
I
C
= -30 mA, I
B
= 0
V
V
CE(SAT)
I
C
= -2 A, I
B
= -8 mA
V
V
BE(on)
I
C
= -2 A, V
CE
= -4 V
-
-
-2.8
V
V
CE
= -4 V, I
C
= -1 A
h
FE
DC Current Gain (*)
V
CE
= -4 V, I
C
= -2 A
I
E
= 0, V
CB
= -10 V
f= 0.1MHz
1000
-
-
-
500
-
-
C
OB
Output Capacitance
-
-
200
pF
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
05/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
