SEMICONDUCTORS
PNP TIP115-116-117
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are designed for general purpose amplifier and low-speed switching
applications.
NPN complements are TIP110-111-112
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Collector-Base Voltage
Ratings
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
Value
-60
-80
-100
-60
-80
-100
-5
Unit
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
-2
A
I
CM
Collector Peak Current
-4
A
I
B
Base Current
50
mA
@ T
c
< 25°
P
T
Power Dissipation
@ T
a
< 25°
50
Watts
2
T
J
Junction Temperature
150
°C
-65 to +150
T
s
Storage Temperature range
05/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
