SEMICONDUCTORS
NPN TIP110-111-112
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are designed for general purpose amplifier and low-speed switching applications.
PNP complements are TIP115-116-117
Compliance to RoHS
.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Collector-Base Voltage
Ratings
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
Value
60
80
100
60
80
100
5
Unit
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
2
A
I
CM
Collector Peak Current
4
A
I
B
Base Current
50
mA
@ T
c
< 25°
P
T
Power Dissipation
@ T
a
< 25°
50
Watts
2
T
J
Junction Temperature
150
°C
-65 to +150
T
s
Storage Temperature range
05/10/2012
COMSET SEMICONDUCTORS
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