SEMICONDUCTORS
NPN TIP100-101-102
THERMAL CHARACTERISTICS
Symbol
R
thJ-case
R
thJ-amb
From junction-case
From junction-ambient
Ratings
Value
1.56
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
Ratings
Collector Cutoff Current
Test Condition(s)
I
E
= 0,V
CB
= V
CBO
max
I
E
= 0, V
CE
= 1/2
V
CEO
max
V
EB
= 5 V, I
C
= 0
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
Min
-
Typ
-
Max
50
Unit
µA
I
CEO
Collector Cutoff Current
-
-
50
µA
I
EBO
Emitter Cutoff Current
Collector-Emitter
Breakdown Voltage (*)
-
60
80
100
-
-
-
-
-
-
8
-
-
-
2
mA
V
CEO
I
C
= 30 mA, I
B
= 0
V
I
C
= 3 A, I
B
= 6 mA
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
= 8 A, I
B
= 80 mA
Base-Emitter Voltage
(*)
V
-
-
2.5
V
BE(on)
I
C
= 8 A, V
CE
= 4 V
-
-
2.8
V
V
CE
= 4 V, I
C
= 3 A
h
FE
DC Current Gain (*)
V
CE
= 4 V, I
C
= 8 A
I
E
= 0, V
CB
= 10 V
f = 1MHz
1000
-
20k
-
200
-
-
C
OB
Output Capacitance
-
-
200
pF
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
04/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
