SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
Notes:
1.
2.
3.
4.
5.
These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate
linearly to 110°C case temperature at the rate of 150 mA/°C.
This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
This value applies for a maximum averaging time of 20 ms.
THERMAL CHARACTERISTICS
Symbol
R
∂JC
R
∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
Value
≤
2.5
≤
62.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
DRM
Ratings
Repetitive peak off-
state current
Gate trigger current
Test Condition(s)
V
D
= Rated V
DRM
, , I
G
= 0,
T
C
= 110°C
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, I
G
= 0,
initiating I
TM
= 100 mA
V
supply
= -12 V†, I
G
= 0,
initiating I
TM
= -100 mA
Min Typ Mx Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
±5
-
-
-
-
-
-
-
-
-
-
-
50
-20
-
±50
-
±2
5
-5
-5
10
2.2
-2.2
-2.2
3
30
mA
-30
-
-
±1.7
-
V/µs
-
mA
V
mA
I
GT
mA
V
GT
Gate trigger voltage
V
I
H
Holding current
I
L
V
TM
dv/dt
dv/dt
©
Latching current
Peak on-state voltage
Critical rate of rise of
off-state voltage
Critical rise of
communication voltage
V
supply
= +12 V† (seeNote7)
V
supply
= -12 V† (seeNote7)
I
TM
= ± 8.4 A, I
G
= 50 mA (see Note6)
V
DRM
= Rated V
DRM
, I
G
= 0
T
C
= 110°C
V
DRM
= Rated V
DRM
, I
TRM
= ± 8.4A
T
C
= 70°C
† All voltages are whit respect to Main Terminal 1.
Page 2 of 3
COMSET [ COMSET SEMICONDUCTOR ]
