TIC206N 参数 Datasheet PDF下载

SEMICONDUCTORS

TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S

Notes:

1.

2.

3.

4.

5.

These values apply bidirectionally for any value of resistance between the gate and Main Terminal

1.

This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate

linearly to 110°C case temperature at the rate of 160 mA/°C.

This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated

value of on-state current. Surge may be repeated after the device has returned to original thermal

equilibrium. During the surge, gate control may be lost.

This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated

value of on-state current. Surge may be repeated after the device has returned to original thermal

equilibrium. During the surge, gate control may be lost.

This value applies for a maximum averaging time of 20 ms.

THERMAL CHARACTERISTICS

Symbol

R

∂JC

R

∂JA

Ratings

Junction to case thermal resistance

Junction to free air thermal resistance

Value

≤

7.8

≤

62.5

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

I

DRM

Ratings

Repetitive peak off-

state current

Gate trigger current

Test Condition(s)

V

D

= Rated V

DRM

, , I

G

= 0,

T

C

= 110°C

V

supply

= +12 V†, R

L

= 10

Ω,

t

p(g)

=

>

20 µs

V

supply

= +12 V†, R

L

= 10

Ω,

t

p(g)

=

>

20 µs

V

supply

= -12 V†, R

L

= 10

Ω,

t

p(g)

=

>

20 µs

V

supply

= -12 V†, R

L

= 10

Ω,

t

p(g)

=

>

20 µs

V

supply

= +12 V†, R

L

= 10

Ω,

t

p(g)

=

>

20 µs

V

supply

= +12 V†, R

L

= 10

Ω,

t

p(g)

=

>

20 µs

V

supply

= -12 V†, R

L

= 10

Ω,

t

p(g)

=

>

20 µs

V

supply

= -12 V†, R

L

= 10

Ω,

t

p(g)

=

>

20 µs

V

supply

= +12 V†, I

G

= 0,

initiating I

TM

= 100 mA

V

supply

= -12 V†, I

G

= 0,

initiating I

TM

= -100 mA

Min Typ Mx Unit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

±1

-

0.5

-1.5

-2

3.6

0.7

-0.7

-0.8

0.8

2

-4

±1

5

-5

-5

10

2

-2

-2

2

15

mA

-15

mA

V

V/µs

±1.3 ±2.5

-

30

-

-30

±1.3 ±2.2

±50

-

mA

I

GT

mA

V

GT

Gate trigger voltage

V

I

H

Holding current

I

L

V

TM

dv/dt

dv/dt

©

Latching current

Peak on-state voltage

Critical rate of rise of

off-state voltage

Critical rise of

communication voltage

V

supply

= +12 V† (seeNote7)

V

supply

= -12 V† (seeNote7)

I

TM

= ± 4.2 A, I

G

= 50 mA (see Note6)

V

DRM

= Rated V

DRM

, I

G

= 0

T

C

= 110°C

V

DRM

= Rated V

DRM

, I

TRM

= ± 4.2A

T

C

= 85°C

† All voltages are whit respect to Main Terminal 1.

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