SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S
THERMAL CHARACTERISTICS
Symbol
R
∂JC
R
∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
Value
≤
7.8
≤
62.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
DRM
Ratings
Repetitive peak
off-state current
Gate trigger current
Test Condition(s)
V
D
= Rated V
DRM
, , I
G
= 0
T
C
= 110°C
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, I
G
= 0
initiating I
TM
= 100 mA
V
supply
= -12 V†, I
G
= 0
initiating I
TM
= -100 mA
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
±1
Typ
-
0.5
-1.5
-2
3.6
0.7
-0.7
-0.8
0.8
2
-4
-
-
±1.3
±50
±1.3
Max
±1
5
-5
-5
10
2
-2
-2
2
15
Unit
mA
I
GT
mA
V
GT
Gate trigger voltage
V
I
H
Holding current
mA
-15
30
-30
±2.2
-
V/µs
±2.5
mA
V
I
L
V
TM
Latching current
V
supply
= +12 V† (seeNote7)
V
supply
= -12 V† (seeNote7)
Peak on-state
I
TM
= ± 4.2 A, I
G
= 50 mA (see Note6)
voltage
Critical rate of rise of V
DRM
= Rated V
DRM
, I
G
= 0
dv/dt
T
C
= 110°C
off-state voltage
Critical rise of
V
DRM
= Rated V
DRM
, I
TRM
= ± 4.2A
communication
dv/dt
©
T
C
= 85°C
voltage
†
All voltages are whit respect to Main Terminal 1.
30/10/2012
COMSET SEMICONDUCTORS
2|4
COMSET [ COMSET SEMICONDUCTOR ]
