SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
Notes:
1. These values apply when the gate-cathode resistance R
GK
= 1kΩ
2. These values apply for continuous dc operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave
operation with resistive load. Above 70°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below)
the rated value of peak reverse voltage and on-state current. Surge may be repeated after
the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
6. This parameters must be measured using pulse techniques, t
W
= 300µs, duty cycle
≤
2 %,
voltage-sensing contacts, separate from the courrent-carrying contacts, are located within
3.2mm (1/8 inch) from de device body.
MECHANICAL DATA CASE TO-220
30/10/2012
COMSET SEMICONDUCTORS
3|4