SEMICONDUCTORS
TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M,
TIC108N, TIC108S
Notes:
1.
2.
3.
4.
5.
These values apply when the gate-cathode resistance R
GK
= 1k
These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to
zero at 110°C.
This value may be applied continuously under single phase 50 Hz half-sine-wave operation with
resistive load. Above 80°C derate linearly to zero at 110°C.
This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
This value applies for a maximum averaging time of 20 ms.
6.
This parameters must be measured using pulse techniques, t
W
= 300µs, duty cycle
≤
2 %, voltage-
sensing contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch)
from de device body.
MECHANICAL DATA CASE TO-220
02/10/2012
COMSET SEMICONDUCTORS
3|3
COMSET [ COMSET SEMICONDUCTOR ]
