SEMICONDUCTORS
TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M,
TIC108N, TIC108S
THERMAL CHARACTERISTICS
Symbol
t
gt
t
q
R
∂JC
R
∂JA
Ratings
Gate-controlled
V
AA
= 30 V, R
L
= 6
Ω
Turn-on time
R
GK(eff)
= 5 kΩ, V
in
= 50 V
Circuit-communicated
V
AA
= 30 V, R
L
= 6
Ω
Turn-off time
I
RM
≈
8 A
Junction to case thermal resistance
Junction to free air thermal resistance
Value
2.9
Unit
µs
13.3
≤
3.5
≤
62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
DRM
I
RRM
I
GT
Ratings
Repetitive peak off-state
current
Repetitive peak reverse
current
Gate trigger current
Test Condition(s)
V
D
= Rated V
DRM
R
GK
= 1 kΩ, T
C
= 110°C
V
R
= Rated V
RRM
, I
G
= 0
T
C
= 110°C
V
AA
= 6 V, R
L
= 100
Ω
t
p(g)
≥
20µs
V
AA
= 6 V, R
L
= 100
Ω
R
GK
= 1 kΩ, t
p(g)
≥
20µs
T
C
= -40°C
V
AA
= 6 V, R
L
= 100
Ω
R
GK
= 1 kΩ, t
p(g)
≥
20µs
V
AA
= 6 V, R
L
= 100
Ω
R
GK
= 1 kΩ, t
p(g)
≥
20µs
T
C
= 110°C
V
AA
= 6 V, R
GK
= 1 kΩ
initiating I
T
= 20 mA
V
AA
= 6 V, R
GK
= 1 kΩ
initiating I
T
= 20 mA
T
C
= -40°C
I
TM
= 5A (see Note6)
V
D
= Rated V
D
, R
GK
= 1 kΩ
T
C
= 110°C
Min
-
-
0.2
-
0.4
0.2
-
-
-
-
Typ
-
-
-
-
0.6
-
-
-
-
80
Max
400
1
200
1.2
1
-
10
Unit
µA
mA
µA
V
GT
Gate trigger voltage
V
I
H
Holding current
mA
15
1.7
-
V
V/µs
V
TM
dv/dt
Peak on-state voltage
Critical rate of rise of off-state
voltage
02/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
