SEMICONDUCTORS
MSS40 / MSS50 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Test Conditions
T
j
= 25 °C
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
Min
-
-
-
-
5
-
0.2
-
-
-
-
1000
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
20
10
20
10
50
1.3
-
80
1.7
1.7
120
-
0.85
11
7
Unit
µA
mA
µA
mA
mA
V
V
mA
V
mA
V/µs
V
mΩ
I
DRM
V
DRM
= V
DRM
Rated
T
j
= 125 °C
T
j
= 25 °C
I
RRM
V
RRM
= V
RRM
Rated
T
j
= 125 °C
V
D
= 12 V, R
L
= 33
Ω
V
D
= 12 V, R
L
= 33
Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA Gate open
I
TM
= 80A t
p
= 380 µs
I
TM
= 100A t
p
= 380 µs
I
G
= 1.2xI
GT
V
D
= 67% V
DRM
Gate open
Threshold voltage
Dynamic resistance
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
I
GT
V
GT
V
GD
I
H
V
TM
I
L
dV/dt
V
t0
R
d
29/10/2012
COMSET SEMICONDUCTORS
3|4
COMSET [ COMSET SEMICONDUCTOR ]
