SEMICONDUCTORS
MJE13007
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
I
CBO
Ratings
Collector-Emitter
Sustaining Voltage (*)
Collector- Cutoff Current
Test Condition(s)
I
C
= 10 mA, I
B
= 0
Min
400
-
-
-
-
-
-
-
-
-
-
8
5
4
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
80
Mx
-
0.1
1
0.1
1
2
3
13
1.2
1.6
1.5
40
30
-
-
Unit
V
mA
mA
V
T
C
= 25°C
V
CB
= 700 V
I
B
= 0
T
C
= 125°C
Emitter Cutoff Current
V
EB
= 9 V, I
C
= 0
I
EBO
I
C
= 2 A, I
B
= 400 mA
T
C
= 25°C
I
C
= 5 A
Collector-Emitter
V
CE(SAT)
I
B
= 1 A
T
C
= 100°C
saturation Voltage (*)
I
C
= 8 A, I
B
= 2 A
I
C
= 2 A, I
B
= 400 mA
Base-Emitter Saturation
T
C
= 25°C
V
BE(SAT)
I
C
= 5 A
Voltage (*)
I
B
= 1 A
T
C
= 100°C
Forward Current transfer V
CE
= 5.0 V, I
C
= 2 A
h
FE
ratio (*)
V
CE
= 5.0 V, I
C
= 5 A
Transition Frequency
V
CE
= 10 V, I
C
= 0.5 A, f= 1 MHz
f
T
Output Capacitance
I
E
= 0 ; V
CB
= 10 V ; f= 1 MHz
C
OB
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
V
-
MHz
pF
SWITCHING TIMES.
Symbol
t
d
t
r
t
s
t
f
.
Ratings
Delay Time
Rise time
Storage Time
Fall Time
Test Condition(s)
V
CC
= 125 V; I
C
= 5 A
I
B1
= -I
B2
= 1 mA
t
p
= 25 µs, duty cycle <1%.
Min
-
-
-
-
Typ
-
-
-
-
Max
0.1
1.5
3
0.7
Unit
µs
02/10/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
