MJ900 – MJ901 PNP
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
I
CEO
I
EBO
Ratings
Collector-Emitter
Breakdown Voltage (*)
Collector Cutoff Current
Test Condition(s)
I
C
=-100 mA, I
B
=0
Min
-60
-80
-
-
-
-
-
-
-
-
-
-
-
1000
750
Typ
-
-
-
-
-
-
-
-
Max
-
-
-500
-2.0
-1.0
Unit
V
µA
mA
I
CER
V
CE(SAT)
V
F
V
BE
H
FE
MJ900
MJ901
V
CE
=-30 V, I
B
=0
MJ900
V
CE
=-40 V, I
B
=0
MJ901
MJ900
Emitter Cutoff Current
V
BE
=-5.0 V, I
C
=0
MJ901
V
CB
=-60 V, R
BE
=1.0 kΩ MJ900
V =-80 V, R
BE
=1.0 kΩ MJ901
Collector-Emitter Leakage
CB
V
CB
=-60 V, R
BE
=1.0 kΩ
Current
MJ900
T
C
=150°C
V
CB
=-80 V, R
BE
=1.0 kΩ
MJ901
T
C
=150°C
MJ900
I
C
=-3.0 A, I
B
=-2 mA
Collector-Emitter
MJ901
saturation Voltage (*)
MJ900
I
C
=-8.0 A, I
B
=-40 mA
MJ901
MJ900
Forward Voltage (pulse
I
F
=-3 A
method)
MJ901
MJ900
Base-Emitter Voltage (*)
I
C
=-3.0 A, V
CE
=-3.0V
MJ901
MJ900
V
CE
=-3.0 V, I
C
=-3.0 A
MJ901
DC Current Gain (*)
MJ900
V
CE
=-3.0 V, I
C
=-4.0 A
MJ901
mA
-5.0
-
-
-
-1.8
-
-
-
-2.0
V
-4.0
-
-2.5
-
-
-
V
V
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
29/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
