NPN MJ4033 – MJ4034 – MJ4035
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
Ratings
Collector-Emitter
Voltage (*)
Collector Cutoff Current
Test Condition(s)
I
C
=100 mA, I
B
=0
V
CE
=30 Vdc, I
B
=0
V
CE
=40 Vdc, I
B
=0
V
CE
=50 V, I
B
=0
V
BE
=5.0 V, I
C
=0
V
CB
=60 V
R
BE
=1.0 kΩ
V
CB
=80 V
R
BE
=1.0 kΩ
V
CB
=100 V
R
BE
=1.0 kΩ
V
CB
=60 V
R
BE
=1.0 kΩ
T
C
=150°C
V
CB
=80 V
R
BE
=1.0 kΩ
T
C
=150°C
V
CB
=100 V
R
BE
=1.0 kΩ
T
C
=150°C
I
C
=10 A
I
B
=40 mA
I
C
=16 A
I
B
=80 mA
I
C
=10 A
V
CE
=3.0V
V
CE
=10 V
I
C
=3.0 A
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
Min
60
80
100
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
-
-
Unit
V
I
CEO
3.0
mA
I
EBO
Emitter Cutoff Current
5.0
mA
1.0
I
CER
Collector-Emitter Leakage
Current
-
-
mAdc
MJ4034
-
-
5.0
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
-
-
2.5
Vdc
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
-
-
4.0
V
BE
Base-Emitter Voltage (*)
-
-
3
V
h
FE
DC Current Gain (*)
1000
-
-
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
29/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
