THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
MJ2500
MJ3000
MJ2501
MJ3001
Value
1.17
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
Min Typ Mx Unit
60
80
-
-
-
-
-
1.0
-
mAdc
-
Vdc
-
BV
CEO
Collector-Emitter
Breakdown Voltage (*)
I
C
=100 mAdc, I
B
=0
I
CEO
Collector Cutoff Current
V
CE
=30 Vdc, I
B
=0
V
CE
=40 Vdc, I
B
=0
I
EBO
Emitter Cutoff Current
V
BE
=5.0 Vdc, I
C
=0
-
-
2.0
mAdc
V
CB
=60 V, R
BE
=1.0 k ohm
-
-
-
-
-
1.0
-
mAdc
-
5.0
-
I
CER
Collector-Emitter Leakage
Current
V
CB
=80 V, R
BE
=1.0 k ohm
V
CB
=60 V, R
BE
=1.0 k ohm,
T
C
=150°C
V
CB
=80 V, R
BE
=1.0 k ohm,
T
C
=150°C
I
C
=5.0 A, I
B
=20 mAdc
-
-
2.0
Vdc
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=10 A, I
B
=50 mAdc
-
-
4.0
V
BE
Base-Emitter Voltage (*)
I
C
=5.0 Adc, V
CE
=3.0Vdc
-
-
3
V
Page 2 of 3
COMSET [ COMSET SEMICONDUCTOR ]
