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MJ2500_12 参数 Datasheet PDF下载

MJ2500_12图片预览
型号: MJ2500_12
PDF下载: 下载PDF文件 查看货源
内容描述: 互补发电DARLINGTONS [COMPLEMENTARY POWER DARLINGTONS]
分类和应用:
文件页数/大小: 3 页 / 78 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号MJ2500_12的Datasheet PDF文件第2页浏览型号MJ2500_12的Datasheet PDF文件第3页  
PNP MJ2500 – MJ2501
COMPLEMENTARY POWER DARLINGTONS
The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic
Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for
use in power linear and switching applications.
The complementary NPN types are the MJ3000 and MJ3001 respectively
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
J
T
s
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Ratings
I
E
=0
I
B
=0
I
C
=0
MJ2500
MJ2501
MJ2500
MJ2501
MJ2500
MJ2501
MJ2500
MJ2501
MJ2500
MJ2501
MJ2500
MJ2501
MJ2500
MJ2501
Value
-60
-80
-60
-80
-5.0
-10
-0.2
150
200
-65 to +200
Unit
V
V
V
A
A
W
°C
@ T
C
< 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
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