SEMICONDUCTORS
IRF640
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DSS
V
GS(th)
I
DSS
Ratings
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain
Current
Gate-Source leakage
Current
Drain-Source on Resistance
Test Condition(s)
Min
200
2
-
-
-
-
Typ
-
3
-
-
-
0.15
Max
-
4
25
Unit
V
V
µA
I
D
= 250 µA, V
GS
= 0 V
I
D
= 250 µA, V
GS
= V
DS
V
DS
= 200 V, V
GS
= 0 V
T
j
= 25 °C
V
DS
= 200 V, V
GS
= 0 V
T
j
= 125 °C
V
GS
= 20 V, V
DS
= 0 V
I
D
= 10 A, V
GS
= 10 V
250
100
0.18
nA
Ω
I
GSS
R
DS(on)
DYNAMIC CHARACTERISTICS
Symbol
g
fs
C
ISS
C
OSS
C
RSS
t
d(on)
t
r
t
d(off)
t
f
Ratings
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer
Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
Test Condition(s)
Min
7
-
-
-
-
-
-
-
Typ
11
1200
200
60
20
145
145
110
Max Unit
-
1560
260
80
50
300
300
230
S
V
DS
= 2*I
D
*R
DS(on)max
I
D
= 9 A
V
GS
= 0 V, V
DS
= 25 V
f= 1MHz
pF
V
DD
= 100 V,
I
D
= 18 A, R
GS
= 25
Ω
ns
REVERSE DIODE
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Ratings
Inverse Diode Continuous
Forward Current.
Inverse diode direct current,
pulsed.
Inverse Diode Forward
voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Condition(s)
Min
-
-
-
-
-
Typ
-
-
-
130
0.8
Max
18
Unit
A
T
C
= 25°C
T
C
= 25°C
V
GS
= 0 V, I
F
= 18 A
V
R
= 25 V, I
F
= 18 A
di/dt = 100 A/µs, T
C
=
150°C
72
2
-
-
V
ns
µC
2/3
09/11/2012
COMSET SEMICONDUCTORS
COMSET [ COMSET SEMICONDUCTOR ]
