NPN BUX84 – BUX85
ELECTRICAL CHARACTERISTICS (3)
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V
CEM
= V
CESmax
V
BE
=0V
BUX84
BUX85
BUX84
Min
-
-
Typ
-
-
-
-
-
50
-
-
-
20
0.3
2
0.4
-
Max
0.2
Unit
I
CES
Collector Cutoff Current(2)
V
CEM
= V
CESmax
V
BE
=0V
T
j
=125° C
V
BE
=5.0 V, I
C
=0
mA
1.5
1
-
-
-
0.8
1
1.1
-
0.5
3.5
-
1.4
µs
MHz
V
mA
V
-
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
-
400
450
30
-
-
-
4
-
-
-
-
I
EBO
V
CEOsust
h
FE
Emitter Cutoff Current
Collector-Emitter sustaining I
C
=100 mA, I
Boff
= 0
Voltage
L=25mH
DC Current Gain
Collector-Emitter saturation
Voltage
Base-Emitter saturation
Voltage
Transition frequency
Turn-on time
Storage time
Fall Time
Fall Time
I
C
=0.1 A, V
CE
=5 V
I
C
=0.3 A, I
B
=30 mA
I
C
=1 A, I
B
=0.2A
I
C
=1 A, I
B
=0.2 A
I
C
=0.5 A, V
CE
=10 V
f= 1MHz
I
C
=1 A, V
CC
=250 V
I
B1
=0.2A, I
B2
=0.4A
I
C
=1 A, V
CC
=250 V
I
B1
=0.2A, I
B2
=0.4
I
C
=1 A, V
CC
=250 V
I
B1
=0.2A, I
B2
=0.4
I
C
=1 A, V
CC
=250 V
I
B1
=0.2A, I
B2
=0.4
T
C
=95°
V
CE(SAT)
V
BE(SAT)
f
T
t
on
T
S
T
f
T
f
(1) Turn off current
(2) Measured with a half-sinewave (curve tracer)
(3)Puls test : PW =300µs, Duty Cycle< 2%
26/10/2012
COMSET SEMICONDUCTORS
3/3
COMSET [ COMSET SEMICONDUCTOR ]
