NPN BUX80
HIGH CURRENT, HIGH SPEED, HIGH POWER
TRANSISTOR
The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in converters, inverters, switching regulators and motor control systems
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CER
V
EBO
V
CES
I
C
I
CM
I
B
P
t
T
J
T
Stg
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Ratings
I
B
= 0
R
BE
= 50Ω
I
C
= 0
V
BE
= 0
t
p
= 10ms
@ T
C
= 40°
Value
400
500
10
800
10
15
5
100
150
-65 to +150
Unit
V
V
V
V
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
CER
I
EBO
I
CES
Ratings
Collector-Emitter
Sustaining Voltage (1)
Collector-Emitter
Sustaining Voltage (1)
Emitter Cutoff Current
Collector Cutoff Current
I
C
=100 mA
Test Condition(s)
Min Typ Mx Unit
400
500
-
-
-
-
-
-
-
-
-
-
10
1
3
V
V
mA
mA
I
C
=100 mA ,
R
BE
= 50Ω
V
CE
=10 V , I
C
=0
V
CE
= V
CES
, V
BE
= 0
V
CE
= V
CES
, V
BE
= 0, T
case
= 125°C
COMSET SEMICONDUCTORS
1/2