NPN BUX39
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
EB0
I
CEO
I
CEX
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
I
S/B
f
T
t
on
t
s
t
f
Ratings
Collector-Emitter Sustaining
Voltage (*)
Emitter-Base Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation
Voltage (*)
Second breakdown collector
current
Transition frequency
Turn-on time
Storage time
File time
Test Condition(s)
I
C
=200 mA
I
C
=0A , I
E
=50 mA
V
CE
=70 V , I
B
=0A
V
CE
= V
CEX
, V
BE
= -1.5V
V
CE
= V
CEX
, V
BE
= -1.5V
T
case
= 125°C
V
EB
=5.0 V, I
C
=0
I
C
=12 A , V
CE
=4.0 V
I
C
=20 A , V
CE
=4.0 V
I
C
=12 A , I
B
=1.2 A
I
C
=20 A , I
B
=2.5 A
I
C
=20 A , I
B
=2.5 A
V
CE
=30 V , t
s
= 1s
V
CE
=135 V , t
s
= 1s
V
CE
=15 V , I
C
=1 A
f=4 MHz
I
C
=8 A , I
B
=1 A
V
CC
=150 V
I
C
=8 A , V
CC
=150 V
I
B1
= -I
B2
=1 A
Min
90
7
-
-
-
-
15
8
-
-
-
4
1
8
-
-
-
Typ
-
-
-
-
-
-
-
-
0.7
1.25
2.1
-
-
-
0.8
0.55
.15
Max
-
-
1
1
5
1
45
-
1.2
1.6
2.5
-
-
-
1.2
1
0.25
Unit
V
V
mA
mA
mA
-
V
A
MHz
µs
(*) Pulse Duration = 300
µs,
Duty Cycle <= 2%
26/10/2012
COMSET SEMICONDUCTORS
3/3
COMSET [ COMSET SEMICONDUCTOR ]
