NPN BUX11
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
EB0(SUS)
I
CEO
I
CEX
I
EBO
Ratings
Collector-Emitter
Sustaining Voltage (1)
Emitter-Base Breakdown
Voltage (1)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
I
C
=200 mA
Test Condition(s)
Min Typ Mx Unit
200
7
-
-
-
-
-
-
-
-
-
-
-
-
1.5
1.5
6
1
V
V
mA
mA
I
C
=0A , I
E
=50 mA
V
CE
=160 V , I
B
=0A
V
CE
= V
CEX
, V
BE
= -1.5V
V
CE
= V
CEX
, V
BE
= -1.5V, T
case
= 125°C
V
EB
=5.0 V, I
C
=0
h
FE
V
CE(SAT)
V
BE(SAT)
DC Current Gain (1)
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
I
C
=6 A , V
CE
=2.0 V
I
C
=12 A , V
CE
=4.0 V
I
C
=6 A , I
B
=0.6 A
I
C
=12 A , I
B
=1.5 A
I
C
=12 A , I
B
=1.5 A
20
10
-
-
-
-
-
0.3
0.6
1.3
60
-
0.6
1.5
1.5
-
V
Symbol
I
S/B
E
S/B
f
T
t
on
t
s
t
f
Ratings
Second breakdown collector
current
Clamped E
S/B
Collector
current
Transition frequency
Turn-on time
Storage time
File time
Test Condition(s)Sec
V
CE
=30 V , t
s
= 1s
V
CE
=140 V , t
s
= 1s
V
clamp
=200 V , L=500 µH
V
CE
=15 V , I
C
=1 A , f=10 MHz
I
C
=12 A , I
B
=1.5 A , V
CC
=150 V
Min Typ Mx Unit
5
0.15
12
8
-
-
-
-
-
-
-
0.3
1.2
0.24
-
-
-
-
1.0
1.8
0.4
µs
MHz
A
I
C
=12 A , V
CC
=150 V
I
B1
= -I
B2
=1.5 A
(1) Pulse Duration = 300
µs,
Duty Cycle <= 2%
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
