NPN BUX11
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
EB0(SUS)
I
CEO
I
CEX
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
I
S/B
E
S/B
f
T
t
on
t
s
t
f
Ratings
Collector-Emitter Sustaining
Voltage (*)
Emitter-Base Breakdown
Voltage (*)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation Voltage
(*)
Second breakdown collector
current
Clamped E
S/B
Collector current
Transition frequency
Turn-on time
Storage time
File time
Test Condition(s)
I
C
=200 mA
I
C
=0A , I
E
=50 mA
V
CE
=160 V , I
B
=0A
V
CE
= V
CEX
, V
BE
= -1.5V
V
CE
= V
CEX
, V
BE
= -1.5V
T
case
= 125°C
V
EB
=5.0 V, I
C
=0
I
C
=6 A , V
CE
=2.0 V
I
C
=12 A , V
CE
=4.0 V
I
C
=6 A , I
B
=0.6 A
I
C
=12 A , I
B
=1.5 A
I
C
=12 A , I
B
=1.5 A
V
CE
=30 V , t
s
= 1s
V
CE
=140 V , t
s
= 1s
V
clamp
=200 V , L=500 µH
V
CE
=15 V , I
C
=1 A
f=10 MHz
I
C
=12 A , I
B
=1.5 A
V
CC
=150 V
I
C
=12 A , V
CC
=150 V
I
B1
= -I
B2
=1.5 A
Min
200
7
-
-
-
-
20
10
-
-
-
5
0.15
12
8
-
-
-
Typ
-
-
-
-
-
-
-
-
0.3
0.6
1.3
-
-
-
-
0.3
1.2
0.24
Max
-
-
1.5
1.5
6
1
60
-
0.6
1.5
1.5
-
-
-
-
1.0
1.8
0.4
Unit
V
V
mA
mA
-
V
A
MHz
µs
(*) Pulse Duration = 300
µs,
Duty Cycle <= 2%
25/10/2012
COMSET SEMICONDUCTORS
2/3