SEMICONDUCTORS
BUV26 – BUV26A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value
Symbol
I
CEX
I
EBO
V
CE0sust
Ratings
Collector Cutoff
Current (*)
Emitter Cutoff
Current
Collector-Emitter
Sustaining Voltage
Collector-Emitter
saturation Voltage
Test Condition(s)
Min
BUV26
V
CE
=V
CESMax
V
BE
= 1.5V, T
J
= 125°C BUV26A
BUV26
V
EB
= 5 V, I
C
= 0
BUV26A
BUV26
I
B
= 0 , I
C
= 0.2 A
L = 25 mH
BUV26A
BUV26
I
C
= 6 A, I
B
= 600 mA
I
C
= 5 A, I
B
= 500 mA
BUV26A
I
C
=12 A, I
B
= 1.2 A
BUV26
I
C
=10 A, I
B
= 1 A
BUV26A
I
C
= 6 A, I
B
= 600 mA
BUV26
I
C
= 5 A, I
B
= 500 mA
BUV26A
I
C
=12 A, I
B
= 1.2 A
BUV26
I
C
=10 A, I
B
= 1 A
BUV26A
-
-
90
100
-
-
-
-
-
-
-
-
Unit
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
1
1
-
-
0.6
0.5
1.5
1
1.2
1.2
2
1.5
mA
mA
V
V
CE(SAT)
V
V
BE(SAT)
Base-Emitter
Saturation Voltage
V
SWITCHING TIMES
Symbol
t
on
t
off
t
f
Ratings
turn-on time
turn-off time
Fall time
Test Condition(s)
Min
For BUV26
I
C
= 12 A , V
CC
= 50 V
I
B1
= 1.2 A , I
B2
= 2 A
For BUV26A
I
C
= 10 A , V
CC
= 50 V
I
B1
= 1 A , I
B2
= 2 A
BUV26
BUV26A
BUV26
BUV26A
BUV26
BUV26A
-
-
-
Value
Typ
0.4
0.5
0.12
Unit
Max
0.8
1.2
0.4
µs
(*) Mesured with a half-sinewave voltage (curve tracer).
29/09/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
