BU911 参数 Datasheet PDF下载

NPN BU911

HIGH VOLTAGE POWER DARLINGTON

The BU911 are high voltage, silicon NPN transistors in monolithic Darlington mounted in Jedec TO-220

plastic package.

They are designed for applications such as electronic ignition, DC and AD motor controls, solenoid

drivers, etc.

ABSOLUTE MAXIMUM RATINGS

Symbol

V

CEO

V

CES

V

EBO

I

C

I

B

P

D

T

J

T

Stg

Ratings

Collector-Emitter Voltage

Collector-Emitter Voltage (V

BE

=0)

Emitter-Base Voltage

Collector Current

Base Current

Total Device Dissipation

Junction Temperature

Storage Temperature range

Value

400

450

5

6

10

1

60

150

-65 to +150

Unit

V

V

V

A

A

A

Watts

°C

°C

I

C

I

CM

@ T

C

= 25°

THERMAL CHARACTERISTICS

Symbol

R

thJ-c

Ratings

Thermal Resistance, Junction to case

Value

70

Unit

K/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

I

CEO

I

CES

I

EBO

V

CEO(sus)

Ratings

Collector Cutoff Current

Collector Cutoff Current

Test Condition(s)

V

CE

=400 V, I

B

=0V

V

CE

=450 V, V

BE

=0

V

CE

=450 V, V

BE

=0, T

C

=125°C

V

BE

=5.0 V, I

C

=0

Min Typ Mx Unit

-

-

-

-

400

-

-

-

-

-

1

1

5

5

-

mA

mA

mA

V

Emitter Cutoff Current

Collector- Emitter sustaining

I

C

=100 mA

Voltage (1)

COMSET SEMICONDUCTORS

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