SEMICONDUCTORS
NPN BU508DF
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
I
CES
I
EBO
V
CE(SAT)
V
BE(SAT)
V
F
h
FE
C
OB
f
T
Ratings
Collector-Emitter
Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
Diode Forwardvoltage
DC Current Gain
Output Capacitance
Transition Frequency
Test Condition(s)
I
C
= 100 mA, I
B
=0
L= 25mH
V
BE
=0, V
CE
= 1500 V
V
BE
=0, V
CE
= 1500 V
T
j
=125°C
V
EB
= 5 V, I
C
=0
I
C
= 4.5 A, I
B
= 1.6 A
I
C
= 4.5 A, I
B
= 2 A
I
F
= 4.5 A
I
C
= 500 mA, V
CE
= 5 V
VCB = 10 V, I
E
=0, f= 1MHz
V
CE
= 5 V, I
C
= 100 mA
Min
700
-
-
-
-
-
-
10
3
-
Typ
-
-
-
-
-
-
1.6
-
-
7
Max
-
1
Unit
V
mA
2
300
1
V
1.1
2
30
-
-
V
-
A
MHz
mA
15/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
