NPN BU2508AF
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
(BR)EBO
V
CE(sat)
V
BE(sat)
Ratings
Collector-Emitter Sustaining
Voltage
Emitter-Base Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Collector Cutoff Current
Test Condition(s)
I
C
= 100mA
I
B
= 0, L= 25mH
I
E
= 1mA
I
C
= 0
I
C
= 4.5A
I
B
= 1.1A
I
C
= 4.5A
I
B
= 1.7A
V
CE
= 1500V
V
BE
= 0
V
CE
= 1500V, V
BE
= 0
T
C
=125°C
V
EB
= 7.5V
I
C
= 0
I
C
= 0.1A
V
CE
= 5V
I
C
= 4.5A
V
CE
= 1V
I
E
= 0; V
CB
= 10V
f
test
= 1MHz
Min
700
7.5
-
-
-
-
-
-
4
-
Typ
-
-
-
-
-
-
-
13
-
80
Max
-
-
1.0
1.1
1.0
Unit
V
V
V
V
I
CES
mA
2.0
1.0
-
7
-
mA
-
-
pF
I
EBO
h
FE
h
FE
C
OB
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
Switching times
t
stg
t
f
Storage Time
Fall Time
I
C
= 4.5A , I
B(end)
= 1.1A
L
B
= 6µH
-V
BB
= 4V; (-dI
B
/dt=
0.6A/µs)
-
-
-
-
6.0
0.6
µs
µs
25/10/2012
08/11/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
