SEMICONDUCTORS
BT151 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DRM
V
RRM
I
GT
V
GT
I
L
I
H
I
D
I
R
V
T
Ratings
Repetitive peak
off-state voltage
Repetitive peak reverse
voltage
Gate trigger current
Gate trigger voltage
Latching current
Holding current
Off-state current
Reverse current
On-state voltage
Test Condition(s)
BT151-500R
BT151-650R
BT151-800R
BT151-500R
BT151-650R
BT151-800R
V
D
= 12 V; I
T
= 100 mA
V
D
= 12 V; I
T
= 100 mA
V
D
= 12 V; I
GT
= 100 mA
V
D
= 12 V; I
GT
= 100 mA
V
D
= V
DRM max;
T
j
= 125°C
V
R
= V
RRM max;
T
j
= 125°C
I
T
= 23 A
Min
500
650
800
500
650
800
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
-
15
1.5
40
20
0.5
0.5
1.75
Unit
V
mA
V
mA
mA
mA
mA
V
DYNAMIC CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V
DM
= 67% V
DRMmax
; T
j
= 125°C
Exponential waveform; gate
open circuit
V
DM
= 67% V
DRMmax
; T
j
= 125°C
Exponential waveform
R
GK
= 100
Ω
I
TM
= 40 A; V
D
= V
DRMmax
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
V
DM
= 67% V
DRMmax
; T
j
= 125°C
I
TM
= 20 A; V
R
= 25 V
R
GK
= 100
Ω
dI
TM
/dt = 30 A/µs
dV
D
/dt = 50 V/µS
Min
50
200
-
Typ
130
1000
2
Max
-
-
-
Unit
V/µs
V/µs
µs
dV
D
/dt
Critical rate of rise of
off-state voltage
Gate controlled
turn-on time
Circuit commutated
Turn-off time
t
gt
t
q
-
70
-
µs
26/09/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
