SEMICONDUCTORS
BT139 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DRM
V
RRM
Ratings
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Gate trigger current
Test Condition(s)
BT139-500
I
D
= 0.1 mA BT139-600
BT139-800
BT139-500
I
D
= 0.5 mA BT139-600
BT139-800
T2+ G+
V
D
= 12 V
T2+ G-
R
L
= 100
Ω
T2- G-
T2- G+
T2+ G+
V
D
= 12 V
T2+ G-
R
L
= 100
Ω
T2- G-
T2- G+
T2+ G+
T2+ G-
V
D
= 12 V
I
GT
= 100 mA T2- G-
T2- G+
I
T
= 200 mA, I
GT
= 50 mA
V
D
= V
DRM max
T
j
= 125°C
I
T
= 10 A
V
DM
= 67% V
DRMmax
T
j
= 125°C
Exponential waveform;
gate open circuit
V
D
= 400 V; T
j
= 95 °C
dI
com
/dt = 7.2 A/ms
I
T
= 16 A
gate open circuit
I
TM
= 20 A; V
D
= V
DRMmax
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
Min
500
600
800
500
600
800
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250
Max
-
-
-
-
-
-
30
30
30
100
1.5
1.5
1.5
1.8
60
90
60
90
50
0.5
1.65
-
Unit
V
I
GT
mA
V
GT
Gate trigger voltage
V
I
L
I
H
I
D
V
T
dV
D
/dt
Latching current
Holding current
Off-state leakage current
On-state voltage
Critical rate of rise of
off-state voltage
Critical rate of rise of change
commutatating current
Gate controlled turn-on time
mA
mA
mA
V
V/µs
dV
COM
/dt
-
20
-
V/µs
t
gt
-
2
-
µs
26/09/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
