NPN BSX62-BSX63
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
V
CB
= 40 V, I
E
=0
V
CB
= 60 V, I
E
=0
BSX62
Min
-
Typ
-
Max
100
Unit
nA
BSX63
-
-
-
-
-
-
-
1
-
-
-
63
100
-
-
30
-
-
-
-
-
-
-
-
-
-
110
180
100
160
70
120
70
-
100
100
0.7
0.8
1.2
1.3
1
1.2
1.3
-
-
160
-
250
-
-
-
70
MHz
pF
µA
nA
V
V
V
I
CBO
Collector Cutoff Current
I
EBO
V
CE(SAT)
V
BE(SAT)
V
BE
Emitter Cutoff Current
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
Base-Emitter Voltage
h
FE
DC Current Gain
f
T
C
C
Transition frequency
Collector capacitance
V
CB
= 40 V, I
E
= 0
BSX62
T
j
= 150°C
V
CB
= 60 V, I
E
=0
BSX63
T
j
= 150°C
V
BE
= 5.0 V, I
C
=0
I
C
= 1 A, I
B
= 100 mA
I
C
= 2 A, I
B
= 200 mA
I
C
= 1 A, I
B
= 100 mA
I
C
= 2 A, I
B
= 200 mA
I
C
= 100 mA, V
CE
= 1 V
I
C
= 1 A, V
CE
= 1 V
I
C
= 2 A, V
CE
= 5 V
BSX62/10
BSX63/10
I
C
= 100 m
V
CE
= 1 V
BSX62/16
BSX63/16
BSX62/10
BSX63/10
I
C
= 1 A
V
CE
= 1 V
BSX62/16
BSX63/16
BSX62/10
BSX63/10
I
C
= 2 A
V
CE
= 1 V
BSX62/16
BSX63/16
I
C
= 200 mA, V
CE
= 10 V
f = 100MHz
I
E
= i
e
=0, V
CB
= 10 V
f = 1MHz
26/09/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
