PNP BSV15 – BSV16 – BSV17
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
-
Typ
-
Max
-100
Unit
nA
I
CBO
I
EBO
V
CE(SAT)
V
BE
h
FE
I
E
= 0, V
CB
= -40 V
BSV15
I
E
= 0, V
CB
= -60 V
BSV16
I
E
= 0, V
CB
= -80 V
BSV17
Collector – Cutoff
Current
V
CB
=-40 V BSV15
I
E
= 0, V
V
CB
=-60 V BSV16
T
amb
= 150°c
V
CB
=-80 V BSV17
BSV15
Emitter – Cutoff
I
C
= 0, V
CE
= -4V
BSV16
Current
BSV17
BSV15
Collector-Emitter
BSV16
I = -500 mA, I
B
= -25 mA
saturation Voltage (*)
C
BSV17
BSV15
I
C
= -100 mA, V
CE
= -1V
BSV16
BSV17
Base-Emitter Voltage
(*)
BSV15
I
C
= -500 mA, V
CE
= -1V
BSV16
BSV17
BSV15
Gr.10
BSV16
I
C
= -100 µA
BSV17
V
CE
= -1 V
BSV15
Gr.16
BSV16
BSV15
Gr.10
BSV16
I
C
= -100 mA
DC Current Gain (*)
BSV17
V
CE
= -1 V
BSV15
Gr.16
BSV16
BSV15
Gr.10
BSV16
I
C
= -500 mA
BSV17
V
CE
= -1 V
BSV15
Gr.16
BSV16
-
-
-50
µA
-
-
-50
nA
-
-
-1
V
-
-
-1
-
-
-1
V
20
30
63
100
25
35
75
120
100
160
55
85
-
-
160
-
250
-
-
12/11/2012
COMSET SEMICONDUCTORS
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