NPN BDY53 – BDY54
SILICON TRANSISTORS, DIFFUSED MESA
They are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
TOT
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
T
J
Ratings
BDY53
BDY54
BDY53
BDY54
Value
60
120
100
180
7
12
5
Unit
V
V
V
A
A
W
@ T
C
= 25°
60
-65 to +200
T
S
Storage Temperature
°C
08/11/2012
COMSET SEMICONDUCTORS
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