BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
BDY23, 180T2
Min Typ Mx Unit
60
90
140
60
100
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
mA
V
V
V
CEO(BR)
I
C
=50 mA, I
B
=0
BDY24, 181T2
BDY25, 182T2
V
(BR)CBO
Collector-Base Breakdown
Voltage (*)
Collector-Emitter Cutoff
Current
BDY23, 180T2
I
C
=3 mA
V
CE
=60 V
V
CE
=90 V
V
CE
=140 V
BDY24, 181T2
BDY25, 182T2
BDY23
BDY24
BDY25
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
I
CEO
-
-
-
-
I
EBO
Emitter-Base Cutoff Current
V
EB
=10 V
V
CE
=60 V
V
BE
=0 V
1.0
mA
-
-
-
-
-
-
-
-
-
-
-
-
0.5
1.0
1.0
1
0.6
0.6
mA
I
CES
Collector-Emitter Cutoff
Current
V
CE
=100 V
V
BE
=0 V
V
CE
=180 V
V
BE
=0 V
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
V
COMSET SEMICONDUCTORS
2/4
COMSET [ COMSET SEMICONDUCTOR ]
