BDX67, A, B, C
Symbol
Ratings
Test Condition(s)
Min
-
Typ
-
-
-
-
5200
-
4000
-
Max
1
5
Unit
T
CASE
=25°C, V
CB
=100 V
BDX67B
I
CBO
Collector-Base Cutoff
Current
T
CASE
=200°C, V
CB
=60 V
T
CASE
=25°C, V
CB
=120 V
-
-
BDX67C
-
-
1000
-
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
-
mA
1
5
-
-
-
2
-
T
CASE
=200°C, V
CB
=70 V
h
FE
DC Current Gain
Collector-Emitter saturation
Voltage (*)
V
CE
=3 V, I
C
=1 A
V
CE
=3 V, I
C
=10 A
V
CE
=3 V, I
C
=16 A
I
C
=10 A, I
B
=40 mA
V
CE(SAT)
V
V
BE
Base-Emitter Voltage(1&2)
V
CE
=3 V, I
C
=10 A
-
-
2,5
V
V
F
Diode forward voltage
I
F
=10 A
-
2,5
-
V
C
c
I
E
=0 A, V
CB
=10V
-
300
-
pF
t
on
Switching characteristics
V
CC
=12V, I
C
=-10 A
I
B1
=- I
B2
=0.04 A
-
1
-
µs
t
off
-
3.5
-
f
hfe
V
CE
=-3 V, I
C
=-5 A
-
50
-
kHz
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
(1) collector-Emitter voltage limited et V
CEci
= V
rated by an auxiliary circuit
COMSET SEMICONDUCTORS
3/5
COMSET [ COMSET SEMICONDUCTOR ]
