BDX67 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
-
-
-
-
-
1000
-
-
Typ
-
-
-
-
5200
-
4000
-
Max
1
5
Unit
I
CBO
h
FE
V
CE(SAT)
V
BE
V
F
C
c
t
on
t
off
f
hfe
T
CASE
=25°C
V
CB
=100 V
BDX67B
T
CASE
=200°C
V
CB
=60 V
Collector-Base Cutoff
Current
T
CASE
=25°C
V
CB
=120 V
BDX67C
T
CASE
=200°C
V
CB
=70 V
V
CE
=3 V, I
C
=1 A
Dc Current Gain
V
CE
=3 V, I
C
=10 A
V
CE
=3 V, I
C
=16 A
BDX67
BDX67A
Collector-Emitter
I
C
=10 A
Saturation Voltage (*)
I
B
=40 mA
BDX67B
BDX67C
BDX67
BDX67A
V
CE
=3 V
Base-Emitter Voltage(1&2)
I
C
=10 A
BDX67B
BDX67C
BDX67
BDX67A
Diode Forward Voltage
I
F
=10 A
BDX67B
BDX67C
BDX67
BDX67A
I
E
=0 A
Collector Capacitance
V
CB
=10V
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
V
CC
=12V
BDX67C
I
C
=-10 A
Switching Characteristics
BDX67
I
B1
=- I
B2
=0.04 A
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
V
CE
=-3 V
Small Signal Current Gain
I
C
=-5 A
BDX67B
BDX67C
mA
1
5
-
-
-
2
-
V
-
-
2,5
V
-
2,5
-
V
-
300
-
pF
-
1
-
µs
-
3.5
-
-
50
-
kHz
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
(1) collector-Emitter voltage limited et V
CEci
= V
rated by an auxiliary circuit
05/10/2012
COMSET SEMICONDUCTORS
3/4
COMSET [ COMSET SEMICONDUCTOR ]
