BDX 66, A, B, C
M
Unit
x
5.0
mA
Symbol
Ratings
Emitter Cutoff Current
Test Condition(s)
BDX66
BDX66A
BDX66B
BDX66C
Min
Typ
-I
EBO
-V
BE
=5 V
-
-
T
CASE
=25°C, -V
CB
=60 V
-
BDX66
-
1
T
CASE
=200°C, -V
CB
=40 V
-
-
5
T
CASE
=25°C, -V
CB
=50 V
-
BDX66A
-
1
T
CASE
=200°C,-V
CB
=80 V
-
-
5
mA
-I
CBO
Collector-Base Cutoff
Current
T
CASE
=25°C, -V
CB
=100 V
-
BDX66B
-
1
T
CASE
=200°C, -V
CB
=60 V
-
-
5
T
CASE
=25°C, -V
CB
=120 V
-
BDX66C
-
1
T
CASE
=200°C, -V
CB
=70 V
-
-
1000
-
BDX66
BDX66A
BDX66B
BDX66C
-
-
-
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
-
-
2000
-
1000
-
-
2
300
5
-
-
-
2
2,5
-
-
h
FE
h
FE
h
FE
-V
CE(SAT)
-V
BE
V
F
C
22b
t
on
DC Current Gain
DC Current Gain
DC Current Gain
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage(1&2)
Diode forward voltage
-V
CE
=3 V,- I
C
=1 A
-V
CE
=3 V,- I
C
=10 A
-V
CE
=3 V,- I
C
=16 A
-I
C
=10 A, -I
B
=40 mA
-
V
V
V
pF
-V
CE
=3 V, -I
C
=10 A
I
F
=10 A
I
E
=0 A, -V
CB
=-10V, f=1
MHz
V
CC
=12V, -I
C
=10 A, -I
B1
=
I
B2
=40 mA
Switching characteristics
-
1
-
µs
COMSET SEMICONDUCTORS
3/4
COMSET [ COMSET SEMICONDUCTOR ]
